SiC DIODE

650V Silicon Carbide Diode (Bare Die)

Features

- 650-Volt Schottky Rectifier
- Shorter recovery time
- High-speed switching possible
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF

Applications

- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives
- HID Lighting

Part No. Maximum Ratings Electrical Characteristics
VRM [V] IF [A] IFSM [A] VF [V] IR [uA]
Typ. Max Typ. Max
PD006065EB 650 6 30 1.5 1.8 16 28
PD008065EB 650 8 40 1.5 1.8 18 34
PD010065EB 650 10 50 1.5 1.8 20 40
PD013065EB 650 13 65 1.5 1.8 23 49
PD020065EB 650 20 100 1.5 1.8 30 70
※ You can get more information by turning the ticket sideways.

650V Silicon Carbide Diode

Features

- 650-Volt Schottky Rectifier
- Shorter recovery time
- High-speed switching possible
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF

Applications

- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives
- HID Lighting

Part No. Package Maximum Ratings Electrical Characteristics
VRM [V] IF [A] IFSM [A] VF [V] IR [uA]
Typ. Max Typ. Max
PD006065EP TO220-2L 650 6 30 1.5 1.8 16 28
PD006065EF TO220F-2L 650 6 30 1.5 1.8 16 28
PD006065ED DPAK 650 6 30 1.5 1.8 16 28
PD008065EP TO220-2L 650 8 40 1.5 1.8 18 34
PD008065EF TO220F-2L 650 8 40 1.5 1.8 18 34
PD008065ED DPAK 650 8 40 1.5 1.8 18 34
PD010065EP TO220-2L 650 10 50 1.5 1.8 20 40
PD010065EF TO220F-2L 650 10 50 1.5 1.8 20 40
PD010065ED DPAK 650 10 50 1.5 1.8 20 40
PD013065EP TO220-2L 650 13 65 1.5 1.8 23 49
PD013065EF TO220F-2L 650 13 65 1.5 1.8 23 49
PD013065ED DPAK 650 13 65 1.5 1.8 23 49
PD013065EK D2PAK 650 13 65 1.5 1.8 23 49
PD020065EP TO220-2L 650 20 100 1.5 1.8 30 70
PD020065EF TO220F-2L 650 20 100 1.5 1.8 30 70
PD020065EK D2PAK 650 20 100 1.5 1.8 30 70
PD020065EH TO247-2L 650 20 100 1.5 1.8 30 70
PD040065EH TO247-3L 650 40 200 1.5 1.8 50 130
※ You can get more information by turning the ticket sideways.

1200V Silicon Carbide Diode (Bare Die)

Features

- 1200-Volt Schottky Rectifier
- Shorter recovery time
- High-speed switching possible
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF

Applications

- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives
- HID Lighting

Part No. Maximum Ratings Electrical Characteristics
VRM [V] IF [A] IFSM [A] VF [V] IR [uA]
Typ. Max Typ. Max
PD015120EB 1200 15 75 1.5 1.8 25 55
PD030120EB 1200 30 150 1.5 1.8 40 100
※ You can get more information by turning the ticket sideways.

1200V Silicon Carbide Diode

Features

- 1200-Volt Schottky Rectifier
- Shorter recovery time
- High-speed switching possible
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF

Applications

- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives
- HID Lighting

Part No. Package Maximum Ratings Electrical Characteristics
VRM [V] IF [A] IFSM [A] VF [V] IR [uA]
Typ. Max Typ. Max
PD015120EP TO220-2L 1200 15 75 1.5 1.8 25 55
PD015120EH TO247-2L 1200 15 75 1.5 1.8 25 55
PD015120EK D2PAK 1200 15 75 1.5 1.8 25 55
PD030120E2H TO247-3L 1200 30 150 1.5 1.8 40 100
PD030120EP TO220-2L 1200 30 150 1.5 1.8 40 100
PD030120EH TO247-2L 1200 30 150 1.5 1.8 40 100
PD060120E2H TO247-3L 1200 60 300 1.5 1.8 70 190
※ You can get more information by turning the ticket sideways.